Ultrasensitive phototransistor based on K-enriched MoO3 single nanowires

• المؤلفون الرئيسيون: Lu, Junpeng, Sun, Cheng, Zheng, Minrui, Wang, Yinghui, Nripan, Mathews, Kan, Jeroen A. van, Mhaisalkar, Subodh Gautam, Sow, Chorng Haur
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Photonics and optoelectronics materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99942; http://hdl.handle.net/10220/17202
• المؤسسة: Nanyang Technological University

An ultrasensitive phototransistor was fabricated based on K-intercalated MoO3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both t...