Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors

Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors

10.1103/PhysRevB.71.085203

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Bibliographic Details
Main Authors: Lin, G.Q., Gong, H., Wu, P.
Other Authors: TEMASEK LABORATORIES
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/111391
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Institution: National University of Singapore
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Summary:10.1103/PhysRevB.71.085203

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