Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors

10.1103/PhysRevB.71.085203

Saved in:
Bibliographic Details
Main Authors: Lin, G.Q., Gong, H., Wu, P.
Other Authors: TEMASEK LABORATORIES
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/111391
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-111391
record_format dspace
spelling sg-nus-scholar.10635-1113912023-10-29T23:30:01Z Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors Lin, G.Q. Gong, H. Wu, P. TEMASEK LABORATORIES MATERIALS SCIENCE 10.1103/PhysRevB.71.085203 Physical Review B - Condensed Matter and Materials Physics 71 8 - PRBMD 2014-11-28T01:51:40Z 2014-11-28T01:51:40Z 2005-02 Article Lin, G.Q., Gong, H., Wu, P. (2005-02). Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors. Physical Review B - Condensed Matter and Materials Physics 71 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.71.085203 10980121 http://scholarbank.nus.edu.sg/handle/10635/111391 000228065300038 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1103/PhysRevB.71.085203
author2 TEMASEK LABORATORIES
author_facet TEMASEK LABORATORIES
Lin, G.Q.
Gong, H.
Wu, P.
format Article
author Lin, G.Q.
Gong, H.
Wu, P.
spellingShingle Lin, G.Q.
Gong, H.
Wu, P.
Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors
author_sort Lin, G.Q.
title Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors
title_short Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors
title_full Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors
title_fullStr Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors
title_full_unstemmed Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors
title_sort electronic properties of barium chalcogenides from first-principles calculations: tailoring wide-band-gap ii-vi semiconductors
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/111391
_version_ 1781788976311435264