Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors
10.1103/PhysRevB.71.085203
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sg-nus-scholar.10635-1113912023-10-29T23:30:01Z Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors Lin, G.Q. Gong, H. Wu, P. TEMASEK LABORATORIES MATERIALS SCIENCE 10.1103/PhysRevB.71.085203 Physical Review B - Condensed Matter and Materials Physics 71 8 - PRBMD 2014-11-28T01:51:40Z 2014-11-28T01:51:40Z 2005-02 Article Lin, G.Q., Gong, H., Wu, P. (2005-02). Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors. Physical Review B - Condensed Matter and Materials Physics 71 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.71.085203 10980121 http://scholarbank.nus.edu.sg/handle/10635/111391 000228065300038 Scopus |
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10.1103/PhysRevB.71.085203 |
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TEMASEK LABORATORIES |
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TEMASEK LABORATORIES Lin, G.Q. Gong, H. Wu, P. |
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Lin, G.Q. Gong, H. Wu, P. |
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Lin, G.Q. Gong, H. Wu, P. Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors |
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Lin, G.Q. |
title |
Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors |
title_short |
Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors |
title_full |
Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors |
title_fullStr |
Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors |
title_full_unstemmed |
Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors |
title_sort |
electronic properties of barium chalcogenides from first-principles calculations: tailoring wide-band-gap ii-vi semiconductors |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/111391 |
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