Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices
10.1063/1.1638615
Saved in:
Main Authors: | Chong, K.B., Kong, L.B., Chen, L., Yan, L., Tan, C.Y., Yang, T., Ong, C.K., Osipowicz, T. |
---|---|
Other Authors: | TEMASEK LABORATORIES |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/115770 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Ba 0.5Sr 0.5TiO 3-Bi 1.5Zn 1.0Nb 1.5O 7 composite thin films with promising microwave dielectric properties for microwave device applications
by: Yan, L., et al.
Published: (2014) -
HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON GASES AT THE (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7/SrTiO3 AND SrAl0.5Ta0.5O3/SrTiO3 INTERFACES
by: HAN KUN
Published: (2018) -
Controllable-permittivity and high-tunability of Ba0.5Sr0.5TiO3/MgO based ceramics by composite configuration
by: Tang, Linjiang, et al.
Published: (2013) -
Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films
by: Zheng, Y.B., et al.
Published: (2014) -
Band-gap energies and structural properties of doped Ba 0.5Sr 0.5TiO 3 thin films
by: Zheng, Y.B., et al.
Published: (2014)