Role of hydroxyl groups in the formation of defect configurations in silicon devices

10.1088/0022-3727/41/24/245407

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書目詳細資料
Main Authors: Ligatchev, V., Sim, L.Y., Ng, M.-F., Xie, X.N., Yang, S.-W.
其他作者: NUS NANOSCIENCE & NANOTECH INITIATIVE
格式: Article
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/115918
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機構: National University of Singapore