Charge-transfer-based mechanism for half-metallicity and ferromagnetism in one-dimensional organometallic sandwich molecular wires

by Shen, L., Yang, S.-W., Ng, M.-F., Ligatchev, V., Zhou, L., Feng, Y.
Published 2014

Role of hydroxyl groups in the formation of defect configurations in silicon devices

by Ligatchev, V., Sim, L.Y., Ng, M.-F., Xie, X.N., Yang, S.-W.
Published 2014

Oxidization states of metal atoms in linear bimetallic multi-sandwich molecules Vn(FeCp2)(n+1) and magnetic moment enhancement mechanism of its 1D wire

by Shen, L., Jin, H., Ligatchev, V., Yang, S.-W., Sullivan, M.B., Feng, Y.
Published 2014

Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

by Chew, K., Rusli, Yoon, S.F., Ahn, J., Ligatchev, V., Teo, E.J., Osipowicz, T., Watt, F.
Published 2014

Gap state distribution in amorphous hydrogenated silicon carbide films deduced from photothermal deflection spectroscopy

by Chew, K., Rusli, Yoon, S.F., Ahn, J., Zhang, Q., Ligatchev, V., Teo, E.J., Osipowicz, T., Watt, F.
Published 2014

Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons

by Chin, S.K., Ligatchev, V., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L.
Published 2014

Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons

by Chin, S.K., Ligatchev, V., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L.
Published 2014

Characteristics of CVD diamond films in detecting UV, x-ray and alpha particle

by Ahn, J., Gan, B., Zhang, Q., Rusli, Yoon, S.F., Ligatchev, V., Wang, S.-G., Huang, Q.-F., Chew, K., Patran, A.-C., Serban, A., Liu, M.-H., Lee, S., Bettiol, A.A., Osipowicz, T., Watt, F.
Published 2014