Pressure-dependent relaxation in the photoexcited mott insulator et - F 2 TCNQ: Influence of hopping and correlations on quasiparticle recombination rates

Pressure-dependent relaxation in the photoexcited mott insulator et - F 2 TCNQ: Influence of hopping and correlations on quasiparticle recombination rates

10.1103/PhysRevLett.112.117801

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Bibliographic Details
Main Authors: Mitrano, M., Cotugno, G., Clark, S.R., Singla, R., Kaiser, S., Stähler, J., Beyer, R., Dressel, M., Baldassarre, L., Nicoletti, D., Perucchi, A., Hasegawa, T., Okamoto, H., Jaksch, D., Cavalleri, A.
Other Authors: CENTRE FOR QUANTUM TECHNOLOGIES
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/116536
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Institution: National University of Singapore

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