Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices

10.1021/nl504956s

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Bibliographic Details
Main Authors: Lu Y., Xu W., Zeng M., Yao G., Shen L., Yang M., Luo Z., Pan F., Wu K., Das T., He P., Jiang J., Martin J., Feng Y.P., Lin H., Wang X.-S.
Other Authors: PHYSICS
Format: Article
Published: American Chemical Society 2016
Online Access:http://scholarbank.nus.edu.sg/handle/10635/127673
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Institution: National University of Singapore