Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2

• Main Authors: Banerjee, Karan, Son, Jaesung, Deorani, Praveen, Ren, Peng, Wang, Lan, Yang, Hyunsoo
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/104380; http://hdl.handle.net/10220/24643
• Institution: Nanyang Technological University

Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeSe2 at temperatures...