Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2
Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeSe2 at temperatures...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2015
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/104380 http://hdl.handle.net/10220/24643 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|