Exciton binding energies and luminescence of phosphorene under pressure
10.1103/PhysRevB.91.115437
Saved in:
Main Authors: | Seixas L., Rodin A.S., Carvalho A., Castro Neto A.H. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
American Physical Society
2016
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/127995 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Atomically thin dilute magnetism in Co-doped phosphorene
by: Seixas L., et al.
Published: (2016) -
Phosphorene oxides: Bandgap engineering of phosphorene by oxidation
by: Ziletti A., et al.
Published: (2016) -
Excitonic collapse in semiconducting transition-metal dichalcogenides
by: Rodin, A.S., et al.
Published: (2014) -
Oxygen defects in phosphorene
by: Ziletti, Angelo, et al.
Published: (2015) -
Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers
by: Xu, S.J., et al.
Published: (2014)