DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY

Ph.D

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Bibliographic Details
Main Author:	WANG YUN-HSIANG
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2016
Subjects:	Gallium Nitride, HEMT, normally-off, temperature stability, power electroncis
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/129155
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-129155
record_format	dspace
spelling	sg-nus-scholar.10635-1291552016-11-01T04:24:35Z DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY WANG YUN-HSIANG ELECTRICAL & COMPUTER ENGINEERING LIANG YUNG CHII SAMUDRA, GANESH S LO GUO QIANG PATRICK Gallium Nitride, HEMT, normally-off, temperature stability, power electroncis Ph.D DOCTOR OF PHILOSOPHY 2016-10-31T18:01:26Z 2016-10-31T18:01:26Z 2016-05-20 Thesis WANG YUN-HSIANG (2016-05-20). DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/129155 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	Gallium Nitride, HEMT, normally-off, temperature stability, power electroncis
spellingShingle	Gallium Nitride, HEMT, normally-off, temperature stability, power electroncis WANG YUN-HSIANG DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING WANG YUN-HSIANG
format	Theses and Dissertations
author	WANG YUN-HSIANG
author_sort	WANG YUN-HSIANG
title	DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY
title_short	DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY
title_full	DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY
title_fullStr	DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY
title_full_unstemmed	DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY
title_sort	design, simulation and fabrication of algan/gan normally-off high electron mobility transistors with investigation on temperature stability
publishDate	2016
url	http://scholarbank.nus.edu.sg/handle/10635/129155
_version_	1681096759142514688

DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY

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