Study on advanced gate stack using high-k dielectric and metal electrode
Ph.D
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2010
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/13131 |
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sg-nus-scholar.10635-131312017-10-21T10:05:11Z Study on advanced gate stack using high-k dielectric and metal electrode HWANG WAN SIK ELECTRICAL & COMPUTER ENGINEERING CHO BYUNG-JIN CHAN SIU HUNG, DANIEL YOO WON JONG Metal electrode, high-k dielectrics, gate stacks, plasma etching, TaN, HfO2 Ph.D DOCTOR OF PHILOSOPHY 2010-04-08T10:30:18Z 2010-04-08T10:30:18Z 2008-06-02 Thesis HWANG WAN SIK (2008-06-02). Study on advanced gate stack using high-k dielectric and metal electrode. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/13131 NOT_IN_WOS en |
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National University of Singapore |
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English |
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Metal electrode, high-k dielectrics, gate stacks, plasma etching, TaN, HfO2 |
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Metal electrode, high-k dielectrics, gate stacks, plasma etching, TaN, HfO2 HWANG WAN SIK Study on advanced gate stack using high-k dielectric and metal electrode |
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Ph.D |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING HWANG WAN SIK |
format |
Theses and Dissertations |
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HWANG WAN SIK |
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HWANG WAN SIK |
title |
Study on advanced gate stack using high-k dielectric and metal electrode |
title_short |
Study on advanced gate stack using high-k dielectric and metal electrode |
title_full |
Study on advanced gate stack using high-k dielectric and metal electrode |
title_fullStr |
Study on advanced gate stack using high-k dielectric and metal electrode |
title_full_unstemmed |
Study on advanced gate stack using high-k dielectric and metal electrode |
title_sort |
study on advanced gate stack using high-k dielectric and metal electrode |
publishDate |
2010 |
url |
http://scholarbank.nus.edu.sg/handle/10635/13131 |
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1681078805300510720 |