High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM

10.1109/JETCAS.2016.2547701

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Main Authors:	Seo, Yeongkyo, Kwon, Kon-Woo, Fong, Xuanyao, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual 1R/W port on-chip memory spin hall metal (SHM) spin-orbit torque (SOT) spin-transfer torque magnetic random access memory (STT-MRAM) STT-MRAMS FUTURE ARCHITECTURE INPLANE
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156177
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-156177
record_format	dspace
spelling	sg-nus-scholar.10635-1561772023-10-31T08:58:12Z High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM Seo, Yeongkyo Kwon, Kon-Woo Fong, Xuanyao Roy, Kaushik DEPT OF ELECTRICAL & COMPUTER ENGG Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual 1R/W port on-chip memory spin hall metal (SHM) spin-orbit torque (SOT) spin-transfer torque magnetic random access memory (STT-MRAM) STT-MRAMS FUTURE ARCHITECTURE INPLANE 10.1109/JETCAS.2016.2547701 IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS 6 3 293-304 2019-07-03T03:23:47Z 2019-07-03T03:23:47Z 2016-09-01 2019-07-03T03:03:45Z Article Seo, Yeongkyo, Kwon, Kon-Woo, Fong, Xuanyao, Roy, Kaushik (2016-09-01). High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM. IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS 6 (3) : 293-304. ScholarBank@NUS Repository. https://doi.org/10.1109/JETCAS.2016.2547701 2156-3357 2156-3365 https://scholarbank.nus.edu.sg/handle/10635/156177 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual 1R/W port on-chip memory spin hall metal (SHM) spin-orbit torque (SOT) spin-transfer torque magnetic random access memory (STT-MRAM) STT-MRAMS FUTURE ARCHITECTURE INPLANE
spellingShingle	Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual 1R/W port on-chip memory spin hall metal (SHM) spin-orbit torque (SOT) spin-transfer torque magnetic random access memory (STT-MRAM) STT-MRAMS FUTURE ARCHITECTURE INPLANE Seo, Yeongkyo Kwon, Kon-Woo Fong, Xuanyao Roy, Kaushik High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM
description	10.1109/JETCAS.2016.2547701
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG Seo, Yeongkyo Kwon, Kon-Woo Fong, Xuanyao Roy, Kaushik
format	Article
author	Seo, Yeongkyo Kwon, Kon-Woo Fong, Xuanyao Roy, Kaushik
author_sort	Seo, Yeongkyo
title	High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM
title_short	High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM
title_full	High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM
title_fullStr	High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM
title_full_unstemmed	High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM
title_sort	high performance and energy-efficient on-chip cache using dual port (1r/1w) spin-orbit torque mram
publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/156177
_version_	1781791691807653888

High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM

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