Simulation of superjunction MOSFET devices

Simulation of superjunction MOSFET devices

Master's

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Bibliographic Details
Main Author: ZHONG HANMEI
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Superjunction devices, power devices, ideal silicon limit, interdiffusion, partial SOI superjunction LDMOS
Online Access:http://scholarbank.nus.edu.sg/handle/10635/17112
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Institution: National University of Singapore
Language: English

Internet

http://scholarbank.nus.edu.sg/handle/10635/17112

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