Simulation of superjunction MOSFET devices

Master's

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Bibliographic Details
Main Author: ZHONG HANMEI
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/17112
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-171122024-10-26T03:46:03Z Simulation of superjunction MOSFET devices ZHONG HANMEI ELECTRICAL & COMPUTER ENGINEERING LIANG YUNG CHII Superjunction devices, power devices, ideal silicon limit, interdiffusion, partial SOI superjunction LDMOS Master's MASTER OF ENGINEERING 2010-05-13T19:32:57Z 2010-05-13T19:32:57Z 2005-08-16 Thesis ZHONG HANMEI (2005-08-16). Simulation of superjunction MOSFET devices. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/17112 NOT_IN_WOS en
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
topic Superjunction devices, power devices, ideal silicon limit, interdiffusion, partial SOI superjunction LDMOS
spellingShingle Superjunction devices, power devices, ideal silicon limit, interdiffusion, partial SOI superjunction LDMOS
ZHONG HANMEI
Simulation of superjunction MOSFET devices
description Master's
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
ZHONG HANMEI
format Theses and Dissertations
author ZHONG HANMEI
author_sort ZHONG HANMEI
title Simulation of superjunction MOSFET devices
title_short Simulation of superjunction MOSFET devices
title_full Simulation of superjunction MOSFET devices
title_fullStr Simulation of superjunction MOSFET devices
title_full_unstemmed Simulation of superjunction MOSFET devices
title_sort simulation of superjunction mosfet devices
publishDate 2010
url http://scholarbank.nus.edu.sg/handle/10635/17112
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