Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition

10.1038/s41467-017-02627-5

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Main Authors: Liu D., Chen X., Hu Y., Sun T., Song Z., Zheng Y., Cao Y., Cai Z., Cao M., Peng L., Huang Y., Du L., Yang W., Chen G., Wei D., Wee A.T.S.
Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
Format: Article
Published: Nature Publishing Group 2020
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/174348
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1743482020-09-07T03:53:30Z Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition Liu D. Chen X. Hu Y. Sun T. Song Z. Zheng Y. Cao Y. Cai Z. Cao M. Peng L. Huang Y. Du L. Yang W. Chen G. Wei D. Wee A.T.S. Wei D. CENTRE FOR ADVANCED 2D MATERIALS DEPT OF PHYSICS graphene quantum dot chemical analysis chemical compound Raman spectroscopy substrate vaporization Article molecule particle size Raman spectrometry sensitivity analysis surface property vapor 10.1038/s41467-017-02627-5 Nature Communications 9 1 193 2020-09-04T02:21:17Z 2020-09-04T02:21:17Z 2018 Article Liu D., Chen X., Hu Y., Sun T., Song Z., Zheng Y., Cao Y., Cai Z., Cao M., Peng L., Huang Y., Du L., Yang W., Chen G., Wei D., Wee A.T.S., Wei D. (2018). Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition. Nature Communications 9 (1) : 193. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-017-02627-5 2041-1723 https://scholarbank.nus.edu.sg/handle/10635/174348 Nature Publishing Group Unpaywall 20200831
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic graphene
quantum dot
chemical analysis
chemical compound
Raman spectroscopy
substrate
vaporization
Article
molecule
particle size
Raman spectrometry
sensitivity analysis
surface property
vapor
spellingShingle graphene
quantum dot
chemical analysis
chemical compound
Raman spectroscopy
substrate
vaporization
Article
molecule
particle size
Raman spectrometry
sensitivity analysis
surface property
vapor
Liu D.
Chen X.
Hu Y.
Sun T.
Song Z.
Zheng Y.
Cao Y.
Cai Z.
Cao M.
Peng L.
Huang Y.
Du L.
Yang W.
Chen G.
Wei D.
Wee A.T.S.
Wei D.
Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
description 10.1038/s41467-017-02627-5
author2 CENTRE FOR ADVANCED 2D MATERIALS
author_facet CENTRE FOR ADVANCED 2D MATERIALS
Liu D.
Chen X.
Hu Y.
Sun T.
Song Z.
Zheng Y.
Cao Y.
Cai Z.
Cao M.
Peng L.
Huang Y.
Du L.
Yang W.
Chen G.
Wei D.
Wee A.T.S.
Wei D.
format Article
author Liu D.
Chen X.
Hu Y.
Sun T.
Song Z.
Zheng Y.
Cao Y.
Cai Z.
Cao M.
Peng L.
Huang Y.
Du L.
Yang W.
Chen G.
Wei D.
Wee A.T.S.
Wei D.
author_sort Liu D.
title Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
title_short Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
title_full Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
title_fullStr Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
title_full_unstemmed Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
title_sort raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
publisher Nature Publishing Group
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/174348
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