Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
10.1038/s41467-017-02627-5
Saved in:
Main Authors: | Liu D., Chen X., Hu Y., Sun T., Song Z., Zheng Y., Cao Y., Cai Z., Cao M., Peng L., Huang Y., Du L., Yang W., Chen G., Wei D., Wee A.T.S. |
---|---|
Other Authors: | CENTRE FOR ADVANCED 2D MATERIALS |
Format: | Article |
Published: |
Nature Publishing Group
2020
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/174348 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
A modification of the universal quasi-chemical model for correlation of vapor-liquid equilibrium data
by: De Jesus, Erwin
Published: (2011) -
Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
by: Ong, B. S., et al.
Published: (2017) -
Unseeded vapor deposition of ZnTe crystals
by: Alcantara, Norberto T.
Published: (2001) -
High-throughput surface-enhanced Raman scattering sensors for near-infrared detection of biochemical molecules
by: Wang, Yifan, et al.
Published: (2023) -
Applying artificial neural networks for vapor-liquid equilibrium prediction
by: Nguyen, Viet D.
Published: (2006)