Strain driven topological phase transitions in atomically thin films of group IV and v elements in the honeycomb structures
10.1088/1367-2630/16/10/105018
Saved in:
Main Authors: | Huang, Z.-Q, Hsu, C.-H, Chuang, F.-C, Liu, Y.-T, Lin, H, Su, W.-S, Ozolins, V, Bansil, A |
---|---|
Other Authors: | CENTRE FOR ADVANCED 2D MATERIALS |
Format: | Article |
Published: |
Institute of Physics Publishing
2020
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/175301 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Quantum spin Hall effect and topological phase transition in InNxBiySb1−x−y/InSb quantum wells
by: Song, Zhigang, et al.
Published: (2017) -
Dual quantum spin Hall insulator by density-tuned correlations in TaIrTe4
by: Tang, Jian, et al.
Published: (2024) -
Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators
by: Chou, B.-H, et al.
Published: (2020) -
HALL EFFECTS IN TOPOLOGICAL INSULATORS
by: LE QUY DUONG
Published: (2016) -
STUDY OF UNDERLAYER MATERIALS TO GENERATE SPIN CURRENTS FOR SPIN ORBIT TORQUE DEVICES
by: RAJAGOPALAN RAMASWAMY
Published: (2019)