In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I-V Measurements

• Main Authors: LUO WEI, Hacke, Peter, JAI PRAKASH, CHAI JING, WANG YAN, SEERAM RAMAKRISHNA, ABERLE,ARMIN GERHARD, KHOO YONG SHENG
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2020
• Subjects: Science & Technology; Technology; Physical Sciences; Energy & Fuels; Materials Science, Multidisciplinary; Physics, Applied; Materials Science; Physics; In-situ dark I-V (DIV) characterization; module power temperature coefficient; photovoltaic (PV) modules; potential-induced degradation (PID); temperature correction; STACKING-FAULTS; SOLAR-CELLS; PERFORMANCE; EXPLANATION; STRESS
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/176845
• Institution: National University of Singapore

10.1109/JPHOTOV.2016.2621352