Fabrication, characterization, and modeling of silicon multi-gate devices

Ph.D

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Main Author: ZHAO HUI
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/18214
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-182142015-01-07T04:08:15Z Fabrication, characterization, and modeling of silicon multi-gate devices ZHAO HUI ELECTRICAL & COMPUTER ENGINEERING SAMUDRA, GANESH S SUBHASH CHANDER RUSTAGI FinFET, NWFET, characterization, simulation, fabrication, modeling Ph.D DOCTOR OF PHILOSOPHY 2010-09-30T18:00:25Z 2010-09-30T18:00:25Z 2009-08-17 Thesis ZHAO HUI (2009-08-17). Fabrication, characterization, and modeling of silicon multi-gate devices. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/18214 NOT_IN_WOS en
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
language English
topic FinFET, NWFET, characterization, simulation, fabrication, modeling
spellingShingle FinFET, NWFET, characterization, simulation, fabrication, modeling
ZHAO HUI
Fabrication, characterization, and modeling of silicon multi-gate devices
description Ph.D
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
ZHAO HUI
format Theses and Dissertations
author ZHAO HUI
author_sort ZHAO HUI
title Fabrication, characterization, and modeling of silicon multi-gate devices
title_short Fabrication, characterization, and modeling of silicon multi-gate devices
title_full Fabrication, characterization, and modeling of silicon multi-gate devices
title_fullStr Fabrication, characterization, and modeling of silicon multi-gate devices
title_full_unstemmed Fabrication, characterization, and modeling of silicon multi-gate devices
title_sort fabrication, characterization, and modeling of silicon multi-gate devices
publishDate 2010
url http://scholarbank.nus.edu.sg/handle/10635/18214
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