Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

10.1063/1.4860950

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Bibliographic Details
Main Authors:	Tang, Z, Zeng, J, Xiong, Y, Tang, M, Xu, D, Cheng, C, Xiao, Y, Zhou, Y
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	2020
Subjects:	Conduction Mechanism Current voltage curve Fabricated device Non-volatile memory application Programming voltage Resistive switching Schottky emissions Space-charge limited Curve fitting Manganese Sol-gel process Thin films Switching systems
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183190
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-183190
record_format	dspace
spelling	sg-nus-scholar.10635-1831902024-04-25T01:01:26Z Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application Tang, Z Zeng, J Xiong, Y Tang, M Xu, D Cheng, C Xiao, Y Zhou, Y MATERIALS SCIENCE AND ENGINEERING Conduction Mechanism Current voltage curve Fabricated device Non-volatile memory application Programming voltage Resistive switching Schottky emissions Space-charge limited Curve fitting Manganese Sol-gel process Thin films Switching systems 10.1063/1.4860950 AIP Advances 3 12 122117 2020-11-10T00:28:57Z 2020-11-10T00:28:57Z 2013 Article Tang, Z, Zeng, J, Xiong, Y, Tang, M, Xu, D, Cheng, C, Xiao, Y, Zhou, Y (2013). Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application. AIP Advances 3 (12) : 122117. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4860950 21583226 https://scholarbank.nus.edu.sg/handle/10635/183190 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Conduction Mechanism Current voltage curve Fabricated device Non-volatile memory application Programming voltage Resistive switching Schottky emissions Space-charge limited Curve fitting Manganese Sol-gel process Thin films Switching systems
spellingShingle	Conduction Mechanism Current voltage curve Fabricated device Non-volatile memory application Programming voltage Resistive switching Schottky emissions Space-charge limited Curve fitting Manganese Sol-gel process Thin films Switching systems Tang, Z Zeng, J Xiong, Y Tang, M Xu, D Cheng, C Xiao, Y Zhou, Y Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
description	10.1063/1.4860950
author2	MATERIALS SCIENCE AND ENGINEERING
author_facet	MATERIALS SCIENCE AND ENGINEERING Tang, Z Zeng, J Xiong, Y Tang, M Xu, D Cheng, C Xiao, Y Zhou, Y
format	Article
author	Tang, Z Zeng, J Xiong, Y Tang, M Xu, D Cheng, C Xiao, Y Zhou, Y
author_sort	Tang, Z
title	Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
title_short	Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
title_full	Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
title_fullStr	Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
title_full_unstemmed	Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
title_sort	resistive switching properties of ce and mn co-doped bifeo3 thin films for nonvolatile memory application
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/183190
_version_	1800914681044402176

Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

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