Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

• Main Authors: Tang, Z, Zeng, J, Xiong, Y, Tang, M, Xu, D, Cheng, C, Xiao, Y, Zhou, Y
• Other Authors: MATERIALS SCIENCE AND ENGINEERING
• Format: Article
• Published: 2020
• Subjects: Conduction Mechanism; Current voltage curve; Fabricated device; Non-volatile memory application; Programming voltage; Resistive switching; Schottky emissions; Space-charge limited; Curve fitting; Manganese; Sol-gel process; Thin films; Switching systems
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/183190
• Institution: National University of Singapore

10.1063/1.4860950