Ion channeling studies of defect formation in GaN and related materials
Ph.D
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2011
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sg-nus-scholar.10635-188812017-10-21T07:51:33Z Ion channeling studies of defect formation in GaN and related materials MUKHTAR AHMED RANA PHYSICS OSIPOWICZ, THOMAS MARK B H BREESE Crystals, Defects, Channeling, GaN, Annealing, Lateral growth Ph.D DOCTOR OF PHILOSOPHY 2011-01-05T18:00:31Z 2011-01-05T18:00:31Z 2006-01-25 Thesis MUKHTAR AHMED RANA (2006-01-25). Ion channeling studies of defect formation in GaN and related materials. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/18881 NOT_IN_WOS en |
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National University of Singapore |
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NUS Library |
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Singapore |
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ScholarBank@NUS |
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English |
topic |
Crystals, Defects, Channeling, GaN, Annealing, Lateral growth |
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Crystals, Defects, Channeling, GaN, Annealing, Lateral growth MUKHTAR AHMED RANA Ion channeling studies of defect formation in GaN and related materials |
description |
Ph.D |
author2 |
PHYSICS |
author_facet |
PHYSICS MUKHTAR AHMED RANA |
format |
Theses and Dissertations |
author |
MUKHTAR AHMED RANA |
author_sort |
MUKHTAR AHMED RANA |
title |
Ion channeling studies of defect formation in GaN and related materials |
title_short |
Ion channeling studies of defect formation in GaN and related materials |
title_full |
Ion channeling studies of defect formation in GaN and related materials |
title_fullStr |
Ion channeling studies of defect formation in GaN and related materials |
title_full_unstemmed |
Ion channeling studies of defect formation in GaN and related materials |
title_sort |
ion channeling studies of defect formation in gan and related materials |
publishDate |
2011 |
url |
http://scholarbank.nus.edu.sg/handle/10635/18881 |
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1681079577209733120 |