Ion channeling studies of defect formation in GaN and related materials

Ph.D

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Main Author: MUKHTAR AHMED RANA
Other Authors: PHYSICS
Format: Theses and Dissertations
Language:English
Published: 2011
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/18881
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-188812024-10-25T23:15:14Z Ion channeling studies of defect formation in GaN and related materials MUKHTAR AHMED RANA PHYSICS OSIPOWICZ, THOMAS MARK B H BREESE Crystals, Defects, Channeling, GaN, Annealing, Lateral growth Ph.D DOCTOR OF PHILOSOPHY 2011-01-05T18:00:31Z 2011-01-05T18:00:31Z 2006-01-25 Thesis MUKHTAR AHMED RANA (2006-01-25). Ion channeling studies of defect formation in GaN and related materials. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/18881 NOT_IN_WOS en
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
topic Crystals, Defects, Channeling, GaN, Annealing, Lateral growth
spellingShingle Crystals, Defects, Channeling, GaN, Annealing, Lateral growth
MUKHTAR AHMED RANA
Ion channeling studies of defect formation in GaN and related materials
description Ph.D
author2 PHYSICS
author_facet PHYSICS
MUKHTAR AHMED RANA
format Theses and Dissertations
author MUKHTAR AHMED RANA
author_sort MUKHTAR AHMED RANA
title Ion channeling studies of defect formation in GaN and related materials
title_short Ion channeling studies of defect formation in GaN and related materials
title_full Ion channeling studies of defect formation in GaN and related materials
title_fullStr Ion channeling studies of defect formation in GaN and related materials
title_full_unstemmed Ion channeling studies of defect formation in GaN and related materials
title_sort ion channeling studies of defect formation in gan and related materials
publishDate 2011
url http://scholarbank.nus.edu.sg/handle/10635/18881
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