Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride

10.1515/nanoph-2020-0075

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Bibliographic Details
Main Authors: Liu, W., Zheng, H., Ang, K., Zhang, H., Liu, H., Han, J., Sun, Q., Ding, S., Zhang, D.W.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: De Gruyter 2021
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/197700
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1977002024-11-14T07:40:52Z Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride Liu, W. Zheng, H. Ang, K. Zhang, H. Liu, H. Han, J. Liu, W. Sun, Q. Ding, S. Zhang, D.W. ELECTRICAL AND COMPUTER ENGINEERING atomic layer deposition black phosphorus field-effect transistor interface state low-frequency noise 10.1515/nanoph-2020-0075 Nanophotonics 9 7 2053-2062 2021-08-18T03:59:41Z 2021-08-18T03:59:41Z 2020 Article Liu, W., Zheng, H., Ang, K., Zhang, H., Liu, H., Han, J., Liu, W., Sun, Q., Ding, S., Zhang, D.W. (2020). Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride. Nanophotonics 9 (7) : 2053-2062. ScholarBank@NUS Repository. https://doi.org/10.1515/nanoph-2020-0075 21928614 https://scholarbank.nus.edu.sg/handle/10635/197700 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ De Gruyter Scopus OA2020
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic atomic layer deposition
black phosphorus
field-effect transistor
interface state
low-frequency noise
spellingShingle atomic layer deposition
black phosphorus
field-effect transistor
interface state
low-frequency noise
Liu, W.
Zheng, H.
Ang, K.
Zhang, H.
Liu, H.
Han, J.
Liu, W.
Sun, Q.
Ding, S.
Zhang, D.W.
Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
description 10.1515/nanoph-2020-0075
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Liu, W.
Zheng, H.
Ang, K.
Zhang, H.
Liu, H.
Han, J.
Liu, W.
Sun, Q.
Ding, S.
Zhang, D.W.
format Article
author Liu, W.
Zheng, H.
Ang, K.
Zhang, H.
Liu, H.
Han, J.
Liu, W.
Sun, Q.
Ding, S.
Zhang, D.W.
author_sort Liu, W.
title Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
title_short Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
title_full Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
title_fullStr Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
title_full_unstemmed Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
title_sort temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
publisher De Gruyter
publishDate 2021
url https://scholarbank.nus.edu.sg/handle/10635/197700
_version_ 1821187689326575616