Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
10.1515/nanoph-2020-0075
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2021
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sg-nus-scholar.10635-1977002024-11-14T07:40:52Z Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride Liu, W. Zheng, H. Ang, K. Zhang, H. Liu, H. Han, J. Liu, W. Sun, Q. Ding, S. Zhang, D.W. ELECTRICAL AND COMPUTER ENGINEERING atomic layer deposition black phosphorus field-effect transistor interface state low-frequency noise 10.1515/nanoph-2020-0075 Nanophotonics 9 7 2053-2062 2021-08-18T03:59:41Z 2021-08-18T03:59:41Z 2020 Article Liu, W., Zheng, H., Ang, K., Zhang, H., Liu, H., Han, J., Liu, W., Sun, Q., Ding, S., Zhang, D.W. (2020). Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride. Nanophotonics 9 (7) : 2053-2062. ScholarBank@NUS Repository. https://doi.org/10.1515/nanoph-2020-0075 21928614 https://scholarbank.nus.edu.sg/handle/10635/197700 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ De Gruyter Scopus OA2020 |
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atomic layer deposition black phosphorus field-effect transistor interface state low-frequency noise |
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atomic layer deposition black phosphorus field-effect transistor interface state low-frequency noise Liu, W. Zheng, H. Ang, K. Zhang, H. Liu, H. Han, J. Liu, W. Sun, Q. Ding, S. Zhang, D.W. Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride |
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10.1515/nanoph-2020-0075 |
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ELECTRICAL AND COMPUTER ENGINEERING |
author_facet |
ELECTRICAL AND COMPUTER ENGINEERING Liu, W. Zheng, H. Ang, K. Zhang, H. Liu, H. Han, J. Liu, W. Sun, Q. Ding, S. Zhang, D.W. |
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Article |
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Liu, W. Zheng, H. Ang, K. Zhang, H. Liu, H. Han, J. Liu, W. Sun, Q. Ding, S. Zhang, D.W. |
author_sort |
Liu, W. |
title |
Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride |
title_short |
Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride |
title_full |
Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride |
title_fullStr |
Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride |
title_full_unstemmed |
Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride |
title_sort |
temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride |
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De Gruyter |
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2021 |
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https://scholarbank.nus.edu.sg/handle/10635/197700 |
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1821187689326575616 |