Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride

• Main Authors: Liu, W., Zheng, H., Ang, K., Zhang, H., Liu, H., Han, J., Sun, Q., Ding, S., Zhang, D.W.
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: De Gruyter 2021
• Subjects: atomic layer deposition; black phosphorus; field-effect transistor; interface state; low-frequency noise
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/197700
• Institution: National University of Singapore

10.1515/nanoph-2020-0075