A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

10.3390/mi10120848

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Bibliographic Details
Main Authors:	Sun, Z., Huang, H., Sun, N., Tao, P., Zhao, C., Liang, Y.C.
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	MDPI AG 2021
Subjects:	Gallium nitride High electron mobility transistors Normally-off operation Vertical gate structure Wide-bandgap semiconductor
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/209512
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-209512
record_format	dspace
spelling	sg-nus-scholar.10635-2095122024-11-11T08:21:02Z A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure Sun, Z. Huang, H. Sun, N. Tao, P. Zhao, C. Liang, Y.C. ELECTRICAL AND COMPUTER ENGINEERING Gallium nitride High electron mobility transistors Normally-off operation Vertical gate structure Wide-bandgap semiconductor 10.3390/mi10120848 Micromachines 10 12 848 2021-12-06T04:19:58Z 2021-12-06T04:19:58Z 2019 Article Sun, Z., Huang, H., Sun, N., Tao, P., Zhao, C., Liang, Y.C. (2019). A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure. Micromachines 10 (12) : 848. ScholarBank@NUS Repository. https://doi.org/10.3390/mi10120848 2072-666X https://scholarbank.nus.edu.sg/handle/10635/209512 Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/ MDPI AG Scopus OA2019
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Gallium nitride High electron mobility transistors Normally-off operation Vertical gate structure Wide-bandgap semiconductor
spellingShingle	Gallium nitride High electron mobility transistors Normally-off operation Vertical gate structure Wide-bandgap semiconductor Sun, Z. Huang, H. Sun, N. Tao, P. Zhao, C. Liang, Y.C. A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
description	10.3390/mi10120848
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Sun, Z. Huang, H. Sun, N. Tao, P. Zhao, C. Liang, Y.C.
format	Article
author	Sun, Z. Huang, H. Sun, N. Tao, P. Zhao, C. Liang, Y.C.
author_sort	Sun, Z.
title	A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
title_short	A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
title_full	A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
title_fullStr	A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
title_full_unstemmed	A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
title_sort	novel gan metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
publisher	MDPI AG
publishDate	2021
url	https://scholarbank.nus.edu.sg/handle/10635/209512
_version_	1821208111941156864

A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

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