A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

10.3390/mi10120848

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Bibliographic Details
Main Authors:	Sun, Z., Huang, H., Sun, N., Tao, P., Zhao, C., Liang, Y.C.
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	MDPI AG 2021
Subjects:	Gallium nitride High electron mobility transistors Normally-off operation Vertical gate structure Wide-bandgap semiconductor
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/209512
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Institution:	National University of Singapore

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