Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

https://doi.org/10.1038/s41928-021-00573-1

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Main Authors: Yesheng Li, Leyi Loh, Sifan Li, Li Chen, Bochang Li, Michel Bosman, Kah Wee Ang
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: Springer Nature 2023
Subjects:
uniform switching
artifical synapse
PdSe2
Online Access:https://scholarbank.nus.edu.sg/handle/10635/244846
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-2448462024-04-17T02:43:09Z Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries Yesheng Li Leyi Loh Sifan Li Li Chen Bochang Li Michel Bosman Kah Wee Ang ELECTRICAL AND COMPUTER ENGINEERING MATERIALS SCIENCE AND ENGINEERING uniform switching artifical synapse PdSe2 https://doi.org/10.1038/s41928-021-00573-1 Nature Electronics 4 5 348-356 2023-09-11T05:12:12Z 2023-09-11T05:12:12Z 2021-05-17 Article Yesheng Li, Leyi Loh, Sifan Li, Li Chen, Bochang Li, Michel Bosman, Kah Wee Ang (2021-05-17). Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries. Nature Electronics 4 (5) : 348-356. ScholarBank@NUS Repository. https://doi.org/https://doi.org/10.1038/s41928-021-00573-1 2520-1131 https://scholarbank.nus.edu.sg/handle/10635/244846 en Springer Nature
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
topic uniform switching
artifical synapse
PdSe2
spellingShingle uniform switching
artifical synapse
PdSe2
Yesheng Li
Leyi Loh
Sifan Li
Li Chen
Bochang Li
Michel Bosman
Kah Wee Ang
Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
description https://doi.org/10.1038/s41928-021-00573-1
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Yesheng Li
Leyi Loh
Sifan Li
Li Chen
Bochang Li
Michel Bosman
Kah Wee Ang
format Article
author Yesheng Li
Leyi Loh
Sifan Li
Li Chen
Bochang Li
Michel Bosman
Kah Wee Ang
author_sort Yesheng Li
title Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
title_short Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
title_full Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
title_fullStr Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
title_full_unstemmed Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
title_sort anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
publisher Springer Nature
publishDate 2023
url https://scholarbank.nus.edu.sg/handle/10635/244846
_version_ 1800915942251692032

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