Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

https://doi.org/10.1038/s41928-021-00573-1

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Bibliographic Details
Main Authors: Yesheng Li, Leyi Loh, Sifan Li, Li Chen, Bochang Li, Michel Bosman, Kah Wee Ang
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: Springer Nature 2023
Subjects:
uniform switching
artifical synapse
PdSe2
Online Access:https://scholarbank.nus.edu.sg/handle/10635/244846
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/244846

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