Enhancing memory window efficiency of ferroelectric transistor for neuromorphic computing via two-dimensional materials integration

Enhancing memory window efficiency of ferroelectric transistor for neuromorphic computing via two-dimensional materials integration

https://doi-org.libproxy1.nus.edu.sg/10.1002/adfm.202304657

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Bibliographic Details
Main Authors: Heng Xiang, Yu-Chieh Chien, Lingqi Li, Haofei Zheng, Sifan Li, Ngoc Thanh Duong, Yufei Shi, Kah-Wee Ang
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: Wiley 2023
Online Access:https://scholarbank.nus.edu.sg/handle/10635/244849
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Institution: National University of Singapore
Language: English
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