Transition from trap-mediated to band-like transport in polycrystalline monolayer molybdenum disulfide memtransistors
10.1063/5.0031799
Saved in:
Main Authors: | Zhang, Panpan, Wang, Lin, Ang, Kah-Wee, Fong, Xuanyao |
---|---|
Other Authors: | ELECTRICAL AND COMPUTER ENGINEERING |
Format: | Article |
Language: | English |
Published: |
AIP Publishing
2023
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/245793 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study
by: Zhang, Panpan, et al.
Published: (2023) -
Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms
by: Ng, T.H., et al.
Published: (2014) -
Monolayer molybdenum disulfide transistors with single-atom-thick gates
by: Zhu, Yibo, et al.
Published: (2020) -
Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation
by: Ly, Denys RB, et al.
Published: (2023) -
Optical characterization of molybdenum disulfide by raman and photoluminescence
by: Sun, Linfeng
Published: (2016)