Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation

• Main Authors: Ly, Denys RB, Fong, Xuanyao
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
• Subjects: Science & Technology; Technology; Physical Sciences; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; 2-D materials; memtransistor (MT); molybdenum disulfide MoS2; ternary content-addressable memory (TCAM); CELL
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/245749
• Institution: National University of Singapore

10.1109/TED.2022.3217996