Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability

Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability

10.1021/acsnano.2c04504

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Bibliographic Details
Main Authors: SIVAN MAHESWARI, LEONG JIN FENG, JOYDEEP GHOSH, TANG BAOSHAN, JIEMING PAN, Evgeny Zamburg, THEAN VOON YEW, AARON
Other Authors: Nordlander, Prof Peter
Format: Article
Language:English
Published: ACS Nano 2022
Subjects:
Two-dimensional materials
memory, memtransistor
physical model
vacancies
memristive 29 switching
channel length scaling
Online Access:https://scholarbank.nus.edu.sg/handle/10635/231800
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/231800

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