Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability

10.1021/acsnano.2c04504

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Bibliographic Details
Main Authors:	SIVAN MAHESWARI, LEONG JIN FENG, JOYDEEP GHOSH, TANG BAOSHAN, JIEMING PAN, Evgeny Zamburg, THEAN VOON YEW, AARON
Other Authors:	Nordlander, Prof Peter
Format:	Article
Language:	English
Published:	ACS Nano 2022
Subjects:	Two-dimensional materials memory, memtransistor physical model vacancies memristive 29 switching channel length scaling
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/231800
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-231800
record_format	dspace
spelling	sg-nus-scholar.10635-2318002024-04-17T03:19:25Z Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability SIVAN MAHESWARI LEONG JIN FENG JOYDEEP GHOSH TANG BAOSHAN JIEMING PAN Evgeny Zamburg THEAN VOON YEW, AARON Nordlander, Prof Peter ELECTRICAL AND COMPUTER ENGINEERING Two-dimensional materials memory, memtransistor physical model vacancies memristive 29 switching channel length scaling 10.1021/acsnano.2c04504 16 9 14308–14322 2022-10-10T02:54:35Z 2022-10-10T02:54:35Z 2022-09-14 Article SIVAN MAHESWARI, LEONG JIN FENG, JOYDEEP GHOSH, TANG BAOSHAN, JIEMING PAN, Evgeny Zamburg, THEAN VOON YEW, AARON (2022-09-14). Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability 16 (9) : 14308–14322. ScholarBank@NUS Repository. https://doi.org/10.1021/acsnano.2c04504 1936-0851 1936-086X https://scholarbank.nus.edu.sg/handle/10635/231800 en ACS Nano
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Two-dimensional materials memory, memtransistor physical model vacancies memristive 29 switching channel length scaling
spellingShingle	Two-dimensional materials memory, memtransistor physical model vacancies memristive 29 switching channel length scaling SIVAN MAHESWARI LEONG JIN FENG JOYDEEP GHOSH TANG BAOSHAN JIEMING PAN Evgeny Zamburg THEAN VOON YEW, AARON Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
description	10.1021/acsnano.2c04504
author2	Nordlander, Prof Peter
author_facet	Nordlander, Prof Peter SIVAN MAHESWARI LEONG JIN FENG JOYDEEP GHOSH TANG BAOSHAN JIEMING PAN Evgeny Zamburg THEAN VOON YEW, AARON
format	Article
author	SIVAN MAHESWARI LEONG JIN FENG JOYDEEP GHOSH TANG BAOSHAN JIEMING PAN Evgeny Zamburg THEAN VOON YEW, AARON
author_sort	SIVAN MAHESWARI
title	Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
title_short	Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
title_full	Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
title_fullStr	Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
title_full_unstemmed	Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
title_sort	physical insights into vacancy-based memtransistors: toward power efficiency, reliable operation, and scalability
publisher	ACS Nano
publishDate	2022
url	https://scholarbank.nus.edu.sg/handle/10635/231800
_version_	1800915571551764480

Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability

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