Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability

10.1021/acsnano.2c04504

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Bibliographic Details
Main Authors:	SIVAN MAHESWARI, LEONG JIN FENG, JOYDEEP GHOSH, TANG BAOSHAN, JIEMING PAN, Evgeny Zamburg, THEAN VOON YEW, AARON
Other Authors:	Nordlander, Prof Peter
Format:	Article
Language:	English
Published:	ACS Nano 2022
Subjects:	Two-dimensional materials memory, memtransistor physical model vacancies memristive 29 switching channel length scaling
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/231800
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Institution:	National University of Singapore
Language:	English

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