Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation

10.1109/TED.2022.3217996

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Bibliographic Details
Main Authors:	Ly, Denys RB, Fong, Xuanyao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics 2-D materials memtransistor (MT) molybdenum disulfide MoS2 ternary content-addressable memory (TCAM) CELL
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/245749
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-245749
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spelling	sg-nus-scholar.10635-2457492024-04-16T11:53:27Z Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation Ly, Denys RB Fong, Xuanyao ELECTRICAL AND COMPUTER ENGINEERING Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics 2-D materials memtransistor (MT) molybdenum disulfide MoS2 ternary content-addressable memory (TCAM) CELL 10.1109/TED.2022.3217996 IEEE TRANSACTIONS ON ELECTRON DEVICES 69 12 6745-6750 2023-11-06T06:49:57Z 2023-11-06T06:49:57Z 2022-12 2023-11-05T08:53:38Z Article Ly, Denys RB, Fong, Xuanyao (2022-12). Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation. IEEE TRANSACTIONS ON ELECTRON DEVICES 69 (12) : 6745-6750. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2022.3217996 0018-9383 1557-9646 https://scholarbank.nus.edu.sg/handle/10635/245749 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics 2-D materials memtransistor (MT) molybdenum disulfide MoS2 ternary content-addressable memory (TCAM) CELL
spellingShingle	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics 2-D materials memtransistor (MT) molybdenum disulfide MoS2 ternary content-addressable memory (TCAM) CELL Ly, Denys RB Fong, Xuanyao Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation
description	10.1109/TED.2022.3217996
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Ly, Denys RB Fong, Xuanyao
format	Article
author	Ly, Denys RB Fong, Xuanyao
author_sort	Ly, Denys RB
title	Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation
title_short	Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation
title_full	Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation
title_fullStr	Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation
title_full_unstemmed	Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation
title_sort	memtransistor-based ternary content-addressable memories: design and evaluation
publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
publishDate	2023
url	https://scholarbank.nus.edu.sg/handle/10635/245749
_version_	1800915965624451072

Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation

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