EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION

Ph.D

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Bibliographic Details
Main Author:	WANG CHENGKUAN
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2024
Subjects:	TRANSISTORS;HEMT;MONOLITHIC INTEGRATION;IZGO;INGAAS;RADIO FREQUENCY
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/247651
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-247651
record_format	dspace
spelling	sg-nus-scholar.10635-2476512024-03-31T18:00:55Z EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION WANG CHENGKUAN ELECTRICAL & COMPUTER ENGINEERING Xiao Gong TRANSISTORS;HEMT;MONOLITHIC INTEGRATION;IZGO;INGAAS;RADIO FREQUENCY Ph.D DOCTOR OF PHILOSOPHY (CDE-ENG) 2024-03-31T18:00:55Z 2024-03-31T18:00:55Z 2023-08-03 Thesis WANG CHENGKUAN (2023-08-03). EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/247651 0000-0003-3254-9826 en
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	TRANSISTORS;HEMT;MONOLITHIC INTEGRATION;IZGO;INGAAS;RADIO FREQUENCY
spellingShingle	TRANSISTORS;HEMT;MONOLITHIC INTEGRATION;IZGO;INGAAS;RADIO FREQUENCY WANG CHENGKUAN EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING WANG CHENGKUAN
format	Theses and Dissertations
author	WANG CHENGKUAN
author_sort	WANG CHENGKUAN
title	EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION
title_short	EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION
title_full	EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION
title_fullStr	EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION
title_full_unstemmed	EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION
title_sort	emerging back-end-of-line compatible indium gallium arsenide and indium-gallium-zinc-oxide field effect transistors for 3d monolithic integration
publishDate	2024
url	https://scholarbank.nus.edu.sg/handle/10635/247651
_version_	1795302073156239360

EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION

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