EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION

Ph.D

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Bibliographic Details
Main Author:	WANG CHENGKUAN
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2024
Subjects:	TRANSISTORS;HEMT;MONOLITHIC INTEGRATION;IZGO;INGAAS;RADIO FREQUENCY
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/247651
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Institution:	National University of Singapore
Language:	English

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