High-Performance Memristors Based on Few-Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing
10.1002/adfm.202305386
Saved in:
Main Authors: | Zhengjin Weng, Haofei Zheng, Wei Lei, Helong Jiang, Kah Wee Ang, Zhiwei Zhao |
---|---|
Other Authors: | ELECTRICAL AND COMPUTER ENGINEERING |
Format: | Article |
Language: | English |
Published: |
2024
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/248323 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy-Efficient Neuromorphic Hardware
by: Zhengjin Weng, et al.
Published: (2024) -
Metal oxide memristors for neuromorphic electronics
by: Ng, Timothy Si En
Published: (2022) -
On the area scalability of valence-change memristors for neuromorphic computing
by: Ang, Diing Shenp, et al.
Published: (2020) -
Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
by: Sifan Li, Bochang Li, et al.
Published: (2022) -
Robust amphiphobic few-layer black phosphorus nanosheet with improved stability
by: Liu, Xiao, et al.
Published: (2020)