Development of high mobility channel layer formation technology for high speed CMOS Devices

Ph.D

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Main Author:	OH HOON JUNG
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2011
Subjects:	high mobility, III-V MOSFET, GaAs-OI, Ge condensation, PH3 treatment, phosphorus nitride
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/25832
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-25832
record_format	dspace
spelling	sg-nus-scholar.10635-258322024-10-26T01:30:49Z Development of high mobility channel layer formation technology for high speed CMOS Devices OH HOON JUNG ELECTRICAL & COMPUTER ENGINEERING LEE SUNGJOO CHO BYUNG-JIN CHUA SOO JIN high mobility, III-V MOSFET, GaAs-OI, Ge condensation, PH3 treatment, phosphorus nitride Ph.D DOCTOR OF PHILOSOPHY 2011-08-31T18:01:11Z 2011-08-31T18:01:11Z 2010-10-18 Thesis OH HOON JUNG (2010-10-18). Development of high mobility channel layer formation technology for high speed CMOS Devices. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/25832 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	high mobility, III-V MOSFET, GaAs-OI, Ge condensation, PH3 treatment, phosphorus nitride
spellingShingle	high mobility, III-V MOSFET, GaAs-OI, Ge condensation, PH3 treatment, phosphorus nitride OH HOON JUNG Development of high mobility channel layer formation technology for high speed CMOS Devices
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING OH HOON JUNG
format	Theses and Dissertations
author	OH HOON JUNG
author_sort	OH HOON JUNG
title	Development of high mobility channel layer formation technology for high speed CMOS Devices
title_short	Development of high mobility channel layer formation technology for high speed CMOS Devices
title_full	Development of high mobility channel layer formation technology for high speed CMOS Devices
title_fullStr	Development of high mobility channel layer formation technology for high speed CMOS Devices
title_full_unstemmed	Development of high mobility channel layer formation technology for high speed CMOS Devices
title_sort	development of high mobility channel layer formation technology for high speed cmos devices
publishDate	2011
url	http://scholarbank.nus.edu.sg/handle/10635/25832
_version_	1821190419452526592

Development of high mobility channel layer formation technology for high speed CMOS Devices

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