Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack

Master's

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Bibliographic Details
Main Author:	LOW KIM FONG EDWIN
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2012
Subjects:	Gallium Nitride, Numerical simulation, HEMT, 2DEG, TCAD, Stress
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/33283
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-33283
record_format	dspace
spelling	sg-nus-scholar.10635-332832015-01-20T08:24:46Z Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack LOW KIM FONG EDWIN ELECTRICAL & COMPUTER ENGINEERING TAN LENG SEOW YEO YEE CHIA Gallium Nitride, Numerical simulation, HEMT, 2DEG, TCAD, Stress Master's MASTER OF ENGINEERING 2012-05-31T18:00:49Z 2012-05-31T18:00:49Z 2012-01-17 Thesis LOW KIM FONG EDWIN (2012-01-17). Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/33283 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	Gallium Nitride, Numerical simulation, HEMT, 2DEG, TCAD, Stress
spellingShingle	Gallium Nitride, Numerical simulation, HEMT, 2DEG, TCAD, Stress LOW KIM FONG EDWIN Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack
description	Master's
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING LOW KIM FONG EDWIN
format	Theses and Dissertations
author	LOW KIM FONG EDWIN
author_sort	LOW KIM FONG EDWIN
title	Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack
title_short	Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack
title_full	Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack
title_fullStr	Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack
title_full_unstemmed	Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack
title_sort	characterization and numerical simulation of gallium nitride-based metal-oxide-semiconductor high electron mobility transistor with high-k gate stack
publishDate	2012
url	http://scholarbank.nus.edu.sg/handle/10635/33283
_version_	1681081329535418368

Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack

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