Hole transport through proton-irradiated p -type silicon wafers during electrochemical anodization

10.1103/PhysRevB.73.035428

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Bibliographic Details
Main Authors: Breese, M.B.H., Champeaux, F.J.T., Teo, E.J., Bettiol, A.A., Blackwood, D.J.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/52620
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Institution: National University of Singapore