Hole transport through proton-irradiated p -type silicon wafers during electrochemical anodization
10.1103/PhysRevB.73.035428
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Main Authors: | Breese, M.B.H., Champeaux, F.J.T., Teo, E.J., Bettiol, A.A., Blackwood, D.J. |
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Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/52620 |
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Institution: | National University of Singapore |
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