Effect of indium segregation on optical and structural properties of GaInNAsGaAs quantum wells at emission wavelength of 1.3 μm

10.1063/1.2362907

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書目詳細資料
Main Authors: Liu, H.F., Dixit, V., Xiang, N.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/55747
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機構: National University of Singapore