Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials

10.1038/srep00360

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Bibliographic Details
Main Authors: Wang, W., Loke, D., Shi, L., Zhao, R., Yang, H., Law, L.-T., Ng, L.-T., Lim, K.-G., Yeo, Y.-C., Chong, T.-C., Lacaita, A.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55866
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Institution: National University of Singapore