Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials

by Wang, W., Loke, D., Shi, L., Zhao, R., Yang, H., Law, L.-T., Ng, L.-T., Lim, K.-G., Yeo, Y.-C., Chong, T.-C., Lacaita, A.L.
Published 2014

Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

by Wang, W.J., Loke, D., Law, L.T., Shi, L.P., Zhao, R., Li, M.H., Chen, L.L., Yang, H.X., Yeo, Y.C., Adeyeye, A.O., Chong, T.C., Lacaita, A.L.
Published 2014