Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

10.1063/1.3499618

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Bibliographic Details
Main Authors:	Soh, C.B., Liu, W., Chua, S.J., Ang, S.S., Tan, R.J.N., Chow, S.Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56123
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-56123
record_format	dspace
spelling	sg-nus-scholar.10635-561232023-10-26T07:43:29Z Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer Soh, C.B. Liu, W. Chua, S.J. Ang, S.S. Tan, R.J.N. Chow, S.Y. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3499618 Journal of Applied Physics 108 9 - JAPIA 2014-06-17T02:50:59Z 2014-06-17T02:50:59Z 2010-11-01 Article Soh, C.B., Liu, W., Chua, S.J., Ang, S.S., Tan, R.J.N., Chow, S.Y. (2010-11-01). Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer. Journal of Applied Physics 108 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3499618 00218979 http://scholarbank.nus.edu.sg/handle/10635/56123 000284270900030 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3499618
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Soh, C.B. Liu, W. Chua, S.J. Ang, S.S. Tan, R.J.N. Chow, S.Y.
format	Article
author	Soh, C.B. Liu, W. Chua, S.J. Ang, S.S. Tan, R.J.N. Chow, S.Y.
spellingShingle	Soh, C.B. Liu, W. Chua, S.J. Ang, S.S. Tan, R.J.N. Chow, S.Y. Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
author_sort	Soh, C.B.
title	Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
title_short	Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
title_full	Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
title_fullStr	Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
title_full_unstemmed	Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
title_sort	generation of amber iii-nitride based light emitting diodes by indium rich ingan quantum dots with ingan wetting layer and aln encapsulation layer
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56123
_version_	1781781113675448320

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

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