Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

10.1063/1.3499618

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Bibliographic Details
Main Authors: Soh, C.B., Liu, W., Chua, S.J., Ang, S.S., Tan, R.J.N., Chow, S.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56123
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56123

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