Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer

10.1109/TED.2004.829861

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Main Authors:	Tan, Y.-N., Chim, W.-K., Cho, B.J., Choi, W.-K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56980
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-569802023-10-25T21:51:44Z Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer Tan, Y.-N. Chim, W.-K. Cho, B.J. Choi, W.-K. ELECTRICAL & COMPUTER ENGINEERING 10.1109/TED.2004.829861 IEEE Transactions on Electron Devices 51 7 1143-1147 IETDA 2014-06-17T03:00:53Z 2014-06-17T03:00:53Z 2004-07 Article Tan, Y.-N., Chim, W.-K., Cho, B.J., Choi, W.-K. (2004-07). Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer. IEEE Transactions on Electron Devices 51 (7) : 1143-1147. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.829861 00189383 http://scholarbank.nus.edu.sg/handle/10635/56980 000222279200016 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/TED.2004.829861
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tan, Y.-N. Chim, W.-K. Cho, B.J. Choi, W.-K.
format	Article
author	Tan, Y.-N. Chim, W.-K. Cho, B.J. Choi, W.-K.
spellingShingle	Tan, Y.-N. Chim, W.-K. Cho, B.J. Choi, W.-K. Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer
author_sort	Tan, Y.-N.
title	Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer
title_short	Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer
title_full	Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer
title_fullStr	Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer
title_full_unstemmed	Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer
title_sort	over-erase phenomenon in sonos-type flash memory and its minimization using a hafnium oxide charge storage layer
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56980
_version_	1781781322471047168

Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer

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